The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Sep. 26, 2014
Nadeemullah A. Mahadik, Springfield, VA (US);
Robert E. Stahlbush, Silver Spring, MD (US);
Marko J. Tadjer, Springfield, VA (US);
Eugene A. Imhoff, Washington, DC (US);
Boris N. Feigelson, Springfield, VA (US);
Nadeemullah A. Mahadik, Springfield, VA (US);
Robert E. Stahlbush, Silver Spring, MD (US);
Marko J. Tadjer, Springfield, VA (US);
Eugene A. Imhoff, Washington, DC (US);
Boris N. Feigelson, Springfield, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method to remove basal plane dislocations in post growth silicon carbide epitaxial layers by capping post growth silicon carbide epilayers with a graphite cap and annealing the capped silicon carbon epilayers at a temperature of 1750° C. or greater with a nitrogen overpressure of 60-110 psi, wherein basal plane dislocations in the epilayers are removed while surface morphology is preserved. Also disclosed is the related silicon carbide substrate material made by this method.