The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Aug. 16, 2011
Scott Cuong Nguyen, Garland, TX (US);
Phuong-lan Thi Tran, Las Colinas, TX (US);
Michelle Marie Eastlack, Richardson, TX (US);
Scott Cuong Nguyen, Garland, TX (US);
Phuong-Lan Thi Tran, Las Colinas, TX (US);
Michelle Marie Eastlack, Richardson, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A process of forming an integrated circuit including an MOS transistor, in which a pre-metal deposition cleanup prior to depositing metal for silicide formation includes an HF etch, a first SCetch, a piranha etch and a second SCetch, so that a native oxide on the source/drain regions is less the 2 nanometers thick before deposition of the silicide metal. A process of forming a metal silicide layer on an integrated circuit containing an MOS transistor, in which a pre-metal deposition cleanup prior to depositing metal for silicide formation includes an HF etch, a first SCetch, a piranha etch and a second SCetch, so that a native oxide on the source/drain regions and the MOS gate is less the 2 nanometers thick before deposition of the silicide metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile