The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

May. 22, 2013
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Yasuyuki Takahashi, Miyagi, JP;

Seiichi Yoneda, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/22 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
G11C 7/22 (2013.01); G11C 11/005 (2013.01);
Abstract

A semiconductor device in which a nonvolatile memory can normally operate and power saving can be performed with a P-state function, and a driving method of the semiconductor device are provided. The semiconductor device includes: a first circuit configured to control a state including a driving voltage and a clock frequency of a processor core; a first memory circuit and a second memory circuit which store state data; a second circuit generating a power supply voltage and a third circuit generating a clock which are electrically connected to the first circuit; and the processor core electrically connected to the second circuit and the third circuit through a switch. The processor cores includes: a volatile memory; and a nonvolatile memory transmitting and receiving data to/from the first memory.


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