The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Feb. 06, 2012
Applicants:

Suk Won Jung, Goyang-si, KR;

Sung Hoon Yang, Seoul, KR;

Sang-youn Han, Seoul, KR;

Seung MI Seo, Hwaseong-si, KR;

Mi-seon Seo, Seoul, KR;

Inventors:

Suk Won Jung, Goyang-si, KR;

Sung Hoon Yang, Seoul, KR;

Sang-Youn Han, Seoul, KR;

Seung Mi Seo, Hwaseong-si, KR;

Mi-Seon Seo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01); G06F 3/042 (2006.01); G06F 3/041 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
G06F 3/042 (2013.01); G06F 3/0412 (2013.01); G02F 1/13338 (2013.01);
Abstract

A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.


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