The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Sep. 27, 2011
Applicants:

Bong Goo Yun, Gangwon-Do, KR;

Woo Jung Park, Gyeonggi-do, KR;

Won Young Song, Seoul, KR;

Jeong Eun Yun, Gyeonggi-do, KR;

Tae Min Ahn, Incheon, KR;

Chul Soo Yoon, Gyeonggi-do, KR;

Young IL Kim, Gyeongsangbuk-do, KR;

Inventors:

Bong Goo Yun, Gangwon-Do, KR;

Woo Jung Park, Gyeonggi-do, KR;

Won Young Song, Seoul, KR;

Jeong Eun Yun, Gyeonggi-do, KR;

Tae Min Ahn, Incheon, KR;

Chul Soo Yoon, Gyeonggi-do, KR;

Young Il Kim, Gyeongsangbuk-do, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/80 (2006.01); C01F 17/00 (2006.01); H01L 33/00 (2010.01); C09K 11/77 (2006.01); C01B 21/082 (2006.01); C09K 11/08 (2006.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
C09K 11/7734 (2013.01); C01B 21/0821 (2013.01); C01B 21/0823 (2013.01); C09K 11/0883 (2013.01); H01L 33/502 (2013.01); C01P 2002/50 (2013.01); C01P 2002/52 (2013.01); C01P 2002/72 (2013.01); C01P 2002/84 (2013.01);
Abstract

Disclosed is a method for preparing a fluorescent substance, which is represented by the formula MEuSiON(M=SrBaCa, 0 x 0.5, 0 y 0.2, 0<z 0.3, 2 a 2.5, 1.5 b 2, and 2 c 2.5), and the present invention provides the method for preparing a nitride-based fluorescent substance comprising the following steps: a preliminary firing step further comprising a first firing step of creating a first firing product by mixing and firing a first precursor group including an M precursor and a first silicon precursor, and a second firing step of creating a second firing product by mixing and firing a second precursor group including an Eu precursor and a second silicon precursor; and a secondary firing step of mixing and firing the first firing product and the second firing product.


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