The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Apr. 29, 2014
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventor:

Takayuki Nosaka, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B65G 35/00 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
B65G 35/00 (2013.01); H01L 21/67046 (2013.01); H01L 21/67051 (2013.01); H01L 21/6776 (2013.01); H01L 21/67173 (2013.01); H01L 21/7684 (2013.01); H01L 21/76801 (2013.01);
Abstract

Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state. Between the step of polishing and the step of cleaning, or after the step of cleaning, the substrate SUB is moved by detecting the presence or absence of the substrate SUB in the light-shielded state using an infrared sensor.


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