The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jul. 09, 2014
Renesas Electronics Corporation, Kanagawa, JP;
Ikuo Fukami, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
An output MOS transistor has a drain connected with a power supply and a source connected with an output terminal. The short-circuit MOS transistor has a source connected with the output terminal. The short-circuit MOS transistor is formed in a semiconductor substrate connected with the power supply. A switching device is formed in a semiconductor region which is formed in the semiconductor substrate, and contains a first diffusion layer connected with the gate of the output MOS transistor and a second diffusion layer formed in the semiconductor region and connected with the drain of the short-circuit MOS transistor.