The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Jan. 27, 2010
Applicants:

Aimin Song, Stockport, GB;

Stephen Whitelegg, Stockport, GB;

Yanming Sun, Weifang, CN;

Shiwei Lin, Hainan, CN;

Inventors:

Aimin Song, Stockport, GB;

Stephen Whitelegg, Stockport, GB;

Yanming Sun, Weifang, CN;

Shiwei Lin, Hainan, CN;

Assignee:

Pragmatic Printing Ltd., Sedgefield, County Durham, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 21/764 (2006.01); H01L 27/28 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0014 (2013.01); H01L 21/764 (2013.01); H01L 27/28 (2013.01); H01L 51/0023 (2013.01); H01L 51/0036 (2013.01); H01L 51/0575 (2013.01); H01L 2251/105 (2013.01);
Abstract

A method of manufacturing an electronic device, comprising a layer of semiconductive material and at least one insulative feature arranged to interrupt the layer of semiconductive material, comprises: providing a layer of semiconductive material, and a layer of compressible material supporting the layer of semiconductive material; and forming the or each insulative feature by a method comprising displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material.


Find Patent Forward Citations

Loading…