The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Nov. 05, 2013
Applicant:
Nichia Corporation, Anan-shi,Tokushima, JP;
Inventors:
Assignee:
NICHIA CORPORATION, Anan-Shi, Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 29/267 (2006.01); H01L 27/14 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 33/38 (2010.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 23/532 (2006.01); H01L 23/28 (2006.01); H01L 23/00 (2006.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 21/022 (2013.01); H01L 21/02304 (2013.01); H01L 21/28247 (2013.01); H01L 21/76841 (2013.01); H01L 23/28 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 24/26 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 2224/022 (2013.01); H01L 2224/8092 (2013.01); H01L 2933/0016 (2013.01);
Abstract
A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film. The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.