The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 27, 2013
Fujifilm Corporation, Tokyo, JP;
Tetsuro Mitsui, Kanagawa, JP;
Yuki Kuramoto, Minami-Ashigara, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A method for manufacturing a photoelectric conversion device including a first process where a plurality of pixel electrodes are formed on a dielectric layer; a second process where a light receiving layer that includes an organic material is formed on the plurality of pixel electrodes; and a third process where a counter electrode is formed on the light receiving layer. The first process includes a film forming process of a pixel electrode material on the dielectric layer; a patterning process of the film of the pixel electrode material; and a heating process for heating the substrate at 270° C. after the patterning process. Such process forming a photoelectric conversion device of a solid-state imaging device which also includes a signal reading circuit formed on the substrate, the signal reading circuit capable of reading out the signal according to a quantity of electric charges collected in the first electrode.