The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Jun. 13, 2012
Applicants:

Takahiko Goda, Anan, JP;

Yasuhisa Kotani, Anan, JP;

Inventors:

Takahiko Goda, Anan, JP;

Yasuhisa Kotani, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 31/00 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01S 5/2009 (2013.01); H01S 5/3407 (2013.01); H01S 5/34333 (2013.01);
Abstract

A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer.


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