The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Sep. 22, 2014
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Takashi Kyono, Itami, JP;
Katsushi Akita, Itami, JP;
Kaoru Shibata, Itami, JP;
Koji Nishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than or equal to 3 μm and less than or equal to 8 μm, the semiconductor device having a dark current density of less than or equal to 1×10A/cmwhen a reverse bias voltage of 60 mV is applied at a temperature of −140° C. Thereby, a semiconductor device which can receive light in a mid-infrared range and has a low dark current is provided.