The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jan. 27, 2012
Manabu Komoda, Omihachimanshi, JP;
Yasuhiro Okada, Yasu, JP;
Yuusuke Nagou, Higashiomi, JP;
Takeshi Ito, Higashiomi, JP;
Hitohiko Nakamura, Yasu, JP;
Manabu Komoda, Omihachimanshi, JP;
Yasuhiro Okada, Yasu, JP;
Yuusuke Nagou, Higashiomi, JP;
Takeshi Ito, Higashiomi, JP;
Hitohiko Nakamura, Yasu, JP;
KYOCERA Corporation, Kyoto, JP;
Abstract
A method for manufacturing a solar cell element is disclosed. The method includes two different etching processes followed by forming a semiconductor layer. A semiconductor substrate having a first conductor type is etched by using a first acid aqueous solution containing hydrofluoric acid, nitric acid, and sulfuric acid. Then, the semiconductor substrate is etched by using a second acid aqueous solution containing hydrofluoric acid and nitric acid with substantially no sulfuric acid to make an uneven surface. A semiconductor layer of second conductivity type different from the first conductivity type is formed on at least a part of the uneven surface of the semiconductor substrate.