The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 15, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Osamu Fujii, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 31/18 (2013.01);
Abstract
According to one embodiment, a solid-state image sensing device manufacturing method includes forming a photoelectric converting element, a diffusion layer included in a floating diffusion, and a read transistor, in a photoelectric converting element formation region of a semiconductor substrate, a floating diffusion formation region, and a read transistor formation region located between the photoelectric converting element formation region and the floating diffusion formation region, respectively, and forming a semiconductor layer including a impurity on the diffusion layer on the semiconductor substrate.