The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 31, 2014
Applicants:
Jianping Zhang, El Monte, CA (US);
Hongmei Wang, El Monte, CA (US);
Chunhui Yan, El Monte, CA (US);
Inventors:
Assignee:
InvenLux Corporation, El Monte, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 33/02 (2010.01); H01L 33/12 (2010.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/02601 (2013.01); H01L 21/02631 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01);
Abstract
A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.