The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Nov. 30, 2010
Chan IL Yeo, Gwangju, KR;
Yong Tak Lee, Gwangju, KR;
Young Min Song, Gwangju, KR;
Gwangju Institute of Science and Technology, Gwangju, KR;
Abstract
A method of fabricating nanostructure for antireflection and a method of fabricating a photo device integrated with the nanostructure for antireflection are provided. The fabrication of the nanostructure for antireflection includes coating a solution containing a combination of metal ions with organic or inorganic ions on a substrate, sintering the coated solution using an annealing process to grow nanoscale metal particles, and chemically etching the substrate using the metal particles as mask or accelerator to form a subwavelength nanostructure on the surface of the substrate, thereby manufacturing the nanostructure for antireflection without an apparatus requiring a vacuum state using a simple method for a short amount of time to minimize reflection of light at an interface between a semiconductor material and the air, and producing a photo device having good luminous efficiency and performance at low cost in large quantities by applying it to the photo device.