The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 02, 2011
Sumio Katoh, Osaka, JP;
Sumio Katoh, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device (S) includes a substrate (), a gate electrode (), a gate insulating film (), an oxide semiconductor film () including a channel part () formed in a position facing the gate electrode (), a source electrode (), and a drain electrode (). The source electrode () and the drain electrode () is arranged so as not to overlap with the gate electrode () as viewed in the plane. A region adjacent to the gate electrode () and the source electrode () and a region adjacent to the gate electrode () and the drain electrode () are, in a region where the source electrode () and the drain electrode () does not overlap with the gate electrode (), processed such that resistance in a region of the oxide semiconductor film () including a surface thereof is reduced.