The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Apr. 28, 2011
Applicants:

Dae-woong Kwon, Seoul, KR;

Jae-chul Park, Suwon-si, KR;

Byung-gook Park, Seoul, KR;

Sang-wan Kim, Seoul, KR;

Jang-hyun Kim, Seoul, KR;

Ji-soo Chang, Seoul, KR;

Inventors:

Dae-woong Kwon, Seoul, KR;

Jae-chul Park, Suwon-si, KR;

Byung-gook Park, Seoul, KR;

Sang-wan Kim, Seoul, KR;

Jang-hyun Kim, Seoul, KR;

Ji-soo Chang, Seoul, KR;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

SNU R&DB Foundation, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01);
Abstract

Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.


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