The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jun. 12, 2013
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Ho Hyun Kim, Seoul, KR;
Seung Bae Hur, Incheon, KR;
Seung Wook Song, Daegu, KR;
Jeong Hwan Park, Gumi-si, KR;
Ha Yong Yang, Cheongju-si, KR;
In Su Kim, Cheongju-si, KR;
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile