logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9123741 B1

PDFFull Text
Expired
Date of Patent:
Sep. 01, 2015

Filed:

Jan. 29, 2013

Metamorphic growth of iii-v semiconductor on silicon substrate by mocvd for high speed iii-v transistors

Applicant:

Nano and Advanced Materials Institute Limited, Hong Kong, CN;

Inventors:

Kei May Lau, Hong Kong, CN;

Chak Wah Tang, Hong Kong, CN;

Assignee:

NANO AND ADVANCED MATERIALS INSTITUTE LIMITED, Kowloon, HK;

Attorneys:

Nath, Goldberg & Meyer

Jerald L. Meyer

Stanley N. Protigal

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Nishath Yasmeen

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0262 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02502 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02584 (2013.01); H01L 29/1075 (2013.01); H01L 29/20 (2013.01); H01L 29/7787 (2013.01);
Abstract

A III-V semiconductor device on a silicon substrate is constructed with a silicon (Si) substrate onto which gallium arsenide (GaAs) indium phosphide (InP) and aluminum indium arsenide (AlInAs) to form a structure of AlInAs over InP over GaAs over Si. The GaAs is applied in at least one layer over the Si, followed by at least one layer of InP and at least one layer of AlInAs. A portion of the structure is doped and a cap or passivation layer is applied.

Find Patent Forward Citations

Lau, Kei. (2015). Metamorphic growth of iii-v semiconductor on silicon substrate by mocvd for high speed iii-v transistors (U.S. Patent No. 9123741). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9123741

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…