The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jul. 30, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Inventors:
Kenro Nakamura, Oita, JP;
Mitsuyoshi Endo, Yamato, JP;
Kazuyuki Higashi, Oita, JP;
Takashi Shirono, Oita, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 25/00 (2006.01); H01L 21/67 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/561 (2013.01); H01L 21/6715 (2013.01); H01L 21/67092 (2013.01); H01L 23/3178 (2013.01); H01L 23/3185 (2013.01); H01L 24/94 (2013.01); H01L 21/6836 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/75744 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80123 (2013.01); H01L 2224/80129 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83123 (2013.01); H01L 2224/83129 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06541 (2013.01);
Abstract
According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.