The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Dec. 19, 2012
Applicants:

Julian Gonska, Reutlingen, DE;

Heribert Weber, Nuertingen, DE;

Jens Frey, Filderstadt, DE;

Timo Schary, Bremen, DE;

Thomas Mayer, Reutlingen, DE;

Inventors:

Julian Gonska, Reutlingen, DE;

Heribert Weber, Nuertingen, DE;

Jens Frey, Filderstadt, DE;

Timo Schary, Bremen, DE;

Thomas Mayer, Reutlingen, DE;

Assignee:

ROBERT BOSCH GMBH, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 21/50 (2006.01); H01L 23/488 (2006.01); H01L 21/18 (2006.01); B81C 1/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/50 (2013.01); B81C 1/00269 (2013.01); H01L 21/185 (2013.01); H01L 21/187 (2013.01); H01L 23/488 (2013.01); H01L 24/94 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0264 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/035 (2013.01); H01L 2224/83805 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/16251 (2013.01);
Abstract

A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.


Find Patent Forward Citations

Loading…