The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 11, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventors:
Yo Sasaki, Saitama-ken, JP;
Yuuji Hisazato, Tokyo, JP;
Kazuya Kodani, Kanagawa-ken, JP;
Atsushi Yamamoto, Tokyo, JP;
Hitoshi Matsumura, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 24/04 (2013.01); H01L 24/82 (2013.01); H01L 2224/82101 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.