The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Feb. 21, 2014
Applicants:

Michael E. Hoenk, Valencia, CA (US);

Frank Greer, Pasadena, CA (US);

Shouleh Nikzad, Valencia, CA (US);

Inventors:

Michael E. Hoenk, Valencia, CA (US);

Frank Greer, Pasadena, CA (US);

Shouleh Nikzad, Valencia, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/148 (2006.01); H01L 27/146 (2006.01); H01L 31/0216 (2014.01); H01L 31/101 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14806 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01); H01L 31/02161 (2013.01); H01L 31/101 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract

A back-illuminated silicon photodetector has a layer of AlOdeposited on a region of a silicon oxide surface that is left uncovered, while deposition is inhibited in another region by a contact shadow mask. The AlOlayer is an antireflection coating. In addition, the AlOlayer can also provide a chemically resistant separation layer between the silicon oxide surface and additional antireflection coating layers. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The AlOlayer is expected to provide similar antireflection properties and chemical protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.


Find Patent Forward Citations

Loading…