The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Oct. 17, 2013
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Qingfei Chen, Santa Clara, CA (US);

Qingwei Shan, San Jose, CA (US);

Yin Qian, Milpitas, CA (US);

Dyson H. Tai, San Jose, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/12 (2006.01); H01L 27/12 (2006.01); H01L 31/06 (2012.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14683 (2013.01); H01L 31/125 (2013.01);
Abstract

A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.


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