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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9123595 B1

PDFFull Text
Date of Patent:
Sep. 01, 2015

Filed:

Dec. 12, 2013

Method for fabricating a semiconductor device by bonding a layer to a support with curvature

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Masakazu Murakami, Kanagawa, JP;

Toru Takayama, Kanagawa, JP;

Junya Maruyama, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Stephen W Smoot

Int. Cl.
CPC ...
H01L 21/58 (2006.01); H01L 33/20 (2010.01); H01L 21/67 (2006.01); H01L 51/00 (2006.01); H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/20 (2006.01); H01L 21/683 (2006.01); H01L 27/15 (2006.01); G02F 1/1333 (2006.01); H01L 51/56 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); G02F 1/133305 (2013.01); H01L 21/2007 (2013.01); H01L 21/67092 (2013.01); H01L 21/6835 (2013.01); H01L 21/76251 (2013.01); H01L 27/1214 (2013.01); H01L 27/1266 (2013.01); H01L 27/156 (2013.01); H01L 29/66757 (2013.01); H01L 29/78603 (2013.01); H01L 51/0097 (2013.01); H01L 27/3244 (2013.01); H01L 51/003 (2013.01); H01L 51/0024 (2013.01); H01L 51/56 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68363 (2013.01); H01L 2227/326 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30105 (2013.01); Y02E 10/549 (2013.01);
Abstract

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

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