The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Aug. 11, 2011
Applicants:

Yul-kyu Lee, Yongin, KR;

Chun-gi You, Yongin, KR;

Sun Park, Yongin, KR;

Jong-hyun Park, Yongin, KR;

Sang-ho Moon, Yongin, KR;

Na-young Kim, Yongin, KR;

Inventors:

Yul-Kyu Lee, Yongin, KR;

Chun-Gi You, Yongin, KR;

Sun Park, Yongin, KR;

Jong-Hyun Park, Yongin, KR;

Sang-Ho Moon, Yongin, KR;

Na-Young Kim, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Giheung-Gu, Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); H01L 27/326 (2013.01); H01L 27/3265 (2013.01); H01L 29/78645 (2013.01); H01L 29/78696 (2013.01); H01L 2227/323 (2013.01);
Abstract

In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: at least one transistor, each including a semiconductor layer, a gate electrode, and source and drain electrodes; a first capacitor including a first electrode formed on the same plane as the semiconductor layer, a second electrode formed on the same plane as the gate electrode, and a third electrode formed on the same plane as the source and drain electrodes; a second capacitor including a first electrode formed on the same plane as the semiconductor layer and comprising ion impurities, and a second electrode formed on the same plane as the gate electrode; a pixel electrode formed on the same plane as the gate electrode and electrically connected to the transistor; a light-emitting layer disposed on the pixel electrode; and an opposite electrode disposed on the light-emitting layer and facing the pixel electrode.


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