The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Nov. 13, 2013
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Chia-Hao Tsai, Miao-Li County, TW;

Chih-Lung Lin, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01);
Abstract

An embodiment of the invention provides a thin-film transistor substrate including: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate electrode; an active layer disposed on the gate insulating layer and above the gate electrode; an etching stop layer disposed on the active layer; a source electrode disposed on the etching stop layer and electrically connecting the active layer; a first insulating layer disposed on the etching stop layer and covering the source electrode; and a transparent electrode including a drain electrode and a pixel electrode connected thereto, wherein the drain electrode passes through the first insulating layer and the etching stop layer and directly contacts the active layer to electrically connect the active layer, and the pixel electrode is disposed the first insulating layer.


Find Patent Forward Citations

Loading…