The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jul. 03, 2013
Imec, Leuven, BE;
Jerome Mitard, Tourinnes-la-Grosse, BE;
Liesbeth Witters, Everberg, BE;
IMEC, Leuven, BE;
Abstract
Disclosed are complementary metal-oxide-semiconductor (CMOS) devices and methods of manufacturing such CMOS devices. In some embodiments, an example CMOS device may include a substrate, and a buffer layer formed on the substrate, where the buffer layer comprises SiGe, where x is less than 0.5. The example CMOS device may further include one or more pMOS channel layer elements, where each pMOS channel layer element comprises SiGe, and where y is greater than x. The example CMOS device may still further include one or more nMOS channel layer elements, where each nMOS channel layer element comprises SiGe, and where z is less than x. In some embodiments, the example CMOS device may be a fin field-effect transistor (FinFET) CMOS device and may further include a first fin structure including the pMOS channel layer element(s) and a second fin structure including the nMOS channel layer element(s).