The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Apr. 30, 2009
Applicants:

Donny Young, San Jose, CA (US);

Lara Hawrylchak, Santa Clara, CA (US);

Inventors:

Donny Young, San Jose, CA (US);

Lara Hawrylchak, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32651 (2013.01); H01J 37/32623 (2013.01); H01J 37/32642 (2013.01); H01J 37/3441 (2013.01); C23C 14/35 (2013.01); H01J 37/32082 (2013.01);
Abstract

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.


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