The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Oct. 03, 2011
Applicants:

Sung Yong an, Gyeonggi-do, KR;

Jin Woo Hahn, Gyeonggi-do, KR;

Jeong Wook Kim, Busan, KR;

Sung Lyoung Kim, Gyeonggi-do, KR;

SO Yeon Song, Gyeonggi-do, KR;

Soo Hwan Son, Seoul, KR;

Ic Seob Kim, Gyeonggi-do, KR;

Inventors:

Sung Yong An, Gyeonggi-do, KR;

Jin Woo Hahn, Gyeonggi-do, KR;

Jeong Wook Kim, Busan, KR;

Sung Lyoung Kim, Gyeonggi-do, KR;

So Yeon Song, Gyeonggi-do, KR;

Soo Hwan Son, Seoul, KR;

Ic Seob Kim, Gyeonggi-do, KR;

Assignee:

SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/26 (2006.01); C04B 35/64 (2006.01); H01F 1/00 (2006.01); H01F 1/10 (2006.01); C01G 49/00 (2006.01);
U.S. Cl.
CPC ...
H01F 1/10 (2013.01); C01G 49/009 (2013.01); C01G 49/0018 (2013.01); C04B 35/265 (2013.01); C04B 35/2633 (2013.01); C01P 2002/52 (2013.01); C01P 2006/42 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3215 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3275 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3281 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3289 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/767 (2013.01); C04B 2235/77 (2013.01);
Abstract

Disclosed herein are a ferrite composition for a high frequency bead in that a part of Fe in M-type hexagonal ferrite represented by BaFeOis substituted with at least one metal selected from a group consisting of 2-valence, 3-valence and 4-valence metals, as well as a chip bead material using the same. According to embodiments of the present invention, the dielectric composition is characterized in that a part of Fe as a constituent of M-type hexagonal barium ferrite is substituted by other metals, to thus decrease a sintering temperature to 920° C. or less without using any additive for low temperature sintering. Moreover, because of high SRF properties, the inventive composition is applicable to a multilayer type chip bead used at a high frequency of more than several hundreds MHz and a magnetic antenna.


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