The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
May. 13, 2013
Applicant:
Seagate Technology Llc, Cupertino, CA (US);
Inventors:
Young-Pil Kim, Eden Prairie, MN (US);
Rodney Virgil Bowman, Bloomington, MN (US);
Assignee:
SEAGATE TECHNOLOGY LLC, Cupertino, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G06F 11/10 (2006.01); G11C 29/02 (2006.01); G11C 29/42 (2006.01); G11C 29/50 (2006.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01); G11C 16/00 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1072 (2013.01); G11C 11/5642 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/42 (2013.01); G11C 29/50004 (2013.01); G11C 29/52 (2013.01); G11C 16/00 (2013.01); G11C 2029/0411 (2013.01);
Abstract
Threshold voltage offsets for threshold voltages are determined. The threshold voltage offsets may be linearly related by a non-zero slope. The threshold voltages are shifted using their respective threshold voltage offsets. The threshold voltages that are shifted by their respective threshold voltage offsets are used to read data from multi-level memory cells.