The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Nov. 07, 2014
AU Optronics Corp., Hsin-Chu, TW;
An-Thung Cho, Hsin-Chu, TW;
Chia-Tien Peng, Hsin-Chu, TW;
Hung-Wei Tseng, Hsin-Chu, TW;
Cheng-Chiu Pai, Hsin-Chu, TW;
Yu-Hsuan Li, Hsin-Chu, TW;
Chun-Hsiun Chen, Hsin-Chu, TW;
Wei-Ming Huang, Hsin-Chu, TW;
AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.