The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
May. 30, 2011
Ken-ichi Tada, Kanagawa, JP;
Kohei Iwanaga, Kanagawa, JP;
Toshiki Yamamoto, Kanagawa, JP;
Atsushi Maniwa, Kanagawa, JP;
Ken-ichi Tada, Kanagawa, JP;
Kohei Iwanaga, Kanagawa, JP;
Toshiki Yamamoto, Kanagawa, JP;
Atsushi Maniwa, Kanagawa, JP;
TOSOH CORPORATION, Yamaguchi, JP;
SAGAMI CHEMICAL RESEARCH INSTITUTE, Kanagawa, JP;
Abstract
This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1') by reacting a chlorosilane derivative (3) with a compound MZ (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R, Rare defined in the specification.