The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jun. 30, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Masayuki Terai, Suwon-si, KR;
In-Gyu Baek, Seoul, KR;
Abstract
A method of fabricating a memory device includes defining a cell region on a substrate and defining a dummy region around the cell region, forming bit lines on a top surface of the substrate, the bit lines extending in one direction, forming cell vertical structures on top surfaces of the bit lines corresponding to the cell region, each cell vertical structure including a cell diode and a variable resistive element, forming dummy vertical structures on top surfaces of the bit lines corresponding to the dummy region, each dummy vertical structure including a dummy diode and a variable resistive element, and forming word lines in contact with top surfaces of the cell vertical structures and dummy vertical structures, the word lines intersecting the bit lines at right angles. The cell diode includes a first impurity pattern and a second impurity pattern, the dummy diode includes a first lightly doped impurity pattern and a second impurity pattern, and the variable resistive element includes a first electrode, a variable resistor, and a second electrode.