The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Jan. 29, 2014
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

BumDoo Park, Seoul, KR;

SonKyo Hwan, Seoul, KR;

TaeJin Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01); H01L 33/44 (2010.01); H01L 33/36 (2010.01); H01L 33/62 (2010.01); H01L 33/48 (2010.01); H01L 33/60 (2010.01); H01L 33/40 (2010.01); H01L 51/56 (2006.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/36 (2013.01); H01L 33/40 (2013.01); H01L 33/486 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/387 (2013.01); H01L 33/42 (2013.01); H01L 51/56 (2013.01); H01L 2224/48091 (2013.01);
Abstract

Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a second electrode layer electrically connected to the second semiconductor layer, and an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis, wherein the anti-crack layer is disposed under the light emitting structure and includes a metal material contacting the light emitting structure.


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