The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jun. 27, 2014
Applicant:
Koha Co., Ltd., Tokyo, JP;
Inventors:
Noboru Ichinose, Kanagawa-ken, JP;
Kiyoshi Shimamura, Chiba-ken, JP;
Yukio Kaneko, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Assignee:
KOHA CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/42 (2010.01); C30B 15/00 (2006.01); C30B 15/34 (2006.01); C30B 29/16 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); C30B 15/00 (2013.01); C30B 15/34 (2013.01); C30B 29/16 (2013.01); H01L 21/0254 (2013.01); H01L 21/0256 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 33/0025 (2013.01); H01L 33/0066 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); H01L 33/007 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/73265 (2013.01);
Abstract
A light emitting element that includes a GaOsubstrate; an AlGaN buffer layer (0≦×≦1) formed on the GaOsubstrate; an n-GaN layer formed on the AlGaN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.