The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Oct. 26, 2011
Applicant:

Masashi Deguchi, Kiyosu, JP;

Inventor:

Masashi Deguchi, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 33/32 (2013.01);
Abstract

A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, a first transparent electrode formed on the second conductive type layer, a reflecting layer formed on the first transparent electrode, and including a smaller area than the first transparent electrode, a second transparent electrode formed on the first transparent electrode so as to cover the reflecting layer, and a pad electrode formed on the second transparent electrode and in a region above the reflecting layer.


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