The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Oct. 08, 2014
Applicant:
Gs Caltex Corporation, Seoul, KR;
Inventors:
Yeokwon Yoon, Daejeon, KR;
Tae-Seok Lee, Daejeon, KR;
Kyoung-Jun Lee, Seoul, KR;
Jae-Hong Kim, Daejeon, KR;
Assignee:
GS CALTEX CORPORATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); C09D 11/52 (2014.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); C09D 11/52 (2013.01); H01L 31/0322 (2013.01); H01L 31/1864 (2013.01);
Abstract
The present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which is included in a thin film solar cell. More particularly, the present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which ultimately improves the efficiency of a solar cell since the remaining carbon impurities in the formed light-absorbing layer are minimized and additional sulfurization treatment or selenium treatment is made optional, not requisite.