The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Feb. 27, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Akira Inoue, Osaka, JP;

Masaki Fujikane, Osaka, JP;

Toshiya Yokogawa, Nara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01);
Abstract

A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle θ, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle θ(mod 180°), which is an absolute value of an angle which is formed by an intersecting line of at least one of the plurality of lateral surfaces of the substrate and the principal surface of the substrate with respect to a polarization direction in the principal surface of the polarized light, is an angle which does not include 0° or 90°.


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