The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Sep. 13, 2013
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Kimitoshi Sato, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); H01L 21/00 (2006.01); H01L 29/84 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/84 (2013.01); G01L 9/0073 (2013.01); H01L 27/0617 (2013.01);
Abstract
At a pressure sensor region, a pressure sensor including a fixed electrode, a void and a movable electrode is formed. At a CMOS region, a memory cell transistor and a field effect transistor are formed. An etching hole communicating with the void is closed by a first sealing film. The void is formed by removing a region of a film identical to the film of a gate electrode of the memory cell transistor. The movable electrode is formed of a film identical to the film of a gate electrode.