The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Oct. 12, 2012
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;

Inventors:

Hyun-Jung Lee, Dongducheon-si, KR;

Sung-Haeng Cho, Chungcheongbuk-do, KR;

Woo-Geun Lee, Yongin-si, KR;

Jang-Hoon Ha, Suwon-si, KR;

Hee-Jun Byeon, Suwon-si, KR;

Ji-Yun Hong, Seoul, KR;

Ji-Soo Oh, Uiwang-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01);
Abstract

A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.


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