The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jun. 04, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
Hiroyuki Okazaki, Tokyo, JP;
Yoshitaka Kamo, Tokyo, JP;
Yoichi Nogami, Tokyo, JP;
Hidetoshi Koyama, Tokyo, JP;
Shinichi Miyakuni, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of AlGaN (0≦x≦1) on the first major surface of the Si substrate; an epitaxially grown crystalline layer of AlGaN (0≦y≦1, x≠y) on the buffer layer; a transistor on the epitaxially grown crystalline layer; and a filler of AlGaN and having the same x as the buffer layer. A through hole in the Si substrate extends from the second major surface to the buffer layer, and the through hole is filled with the filler.