The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Oct. 05, 2011
Applicant:

Tsuyoshi Nakano, Sodegaura, JP;

Inventor:

Tsuyoshi Nakano, Sodegaura, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/66462 (2013.01); H01L 29/7785 (2013.01); H01L 29/66856 (2013.01); H01L 29/812 (2013.01);
Abstract

There is provided a high-performance compound semiconductor epitaxial wafer that has an improved linearity of the voltage-current characteristic, a producing method thereof, and a judging method thereof. Provided is a semiconductor wafer including a compound semiconductor that produces a two-dimensional carrier gas, a carrier supply semiconductor that supplies a carrier to the compound semiconductor, and a mobility lowering semiconductor that is disposed between the compound semiconductor and the carrier supply semiconductor and that has a mobility lowering factor that makes the mobility of the carrier in the mobility lowering semiconductor lower than the mobility of the carrier in the compound semiconductor.


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