The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Mar. 13, 2014
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Takahiro Sumi, Kyoto-fu, JP;

Jun Adachi, Kyoto-fu, JP;

Takayuki Tsukizawa, Kyoto-fu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/60 (2006.01); H01T 1/20 (2006.01); H01T 4/10 (2006.01); H01T 4/12 (2006.01); H01T 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 21/76886 (2013.01); H01T 1/20 (2013.01); H01T 4/10 (2013.01); H01T 4/12 (2013.01); H01T 21/00 (2013.01); H01L 23/291 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An ESD protection device includes a first discharge electrode and a second discharge electrode arranged to oppose each other, a discharge supporting electrode formed so as to span between the first and second discharge electrodes, and an insulator substrate that retains the first and second discharge electrodes and the discharge supporting electrode. The discharge supporting electrode is constituted by a group of a plurality of metal particles each coated with a semiconductor film containing silicon carbide. This discharge supporting electrode is obtained by firing a semiconductor-metal complex powder in which a semiconductor powder composed of silicon carbide is fixed to surfaces of metal particles. Selection is made so that the relationship between a coating amount Q [wt %] of the semiconductor powder in the semiconductor-metal complex powder and a specific surface area S [m/g] of the metal powder satisfies Q/S≧8.


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