The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Oct. 18, 2013
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Zhenghao Gan, Shanghai, CN;
Abstract
Various embodiments provide electrostatic discharge protection structures and methods for forming the same. An exemplary structure can include a semiconductor chip including a through hole. The structure can further include a through silicon via (TSV) structure disposed within the through hole and passing through the semiconductor chip. The TSV structure can have a first surface and a second surface. The structure can further include a tunneling dielectric layer disposed on the first surface of the TSV structure. The tunneling dielectric layer can have a surface area covering a top view surface area of the TSV structure and a surface portion of the semiconductor chip surrounding the TSV structure. Yet further, the structure can include a metal material discretely dispersed in the tunneling dielectric layer, a first electrode disposed on the tunneling dielectric layer, and a second electrode disposed on the second surface of the TSV structure.