The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Sep. 16, 2013
Applicants:

John R. Williams, Opelika, AL (US);

Ayayi C. Ahyi, Auburn, AL (US);

Tamara F. Isaacs-smith, Auburn, AL (US);

Yogesh K. Sharma, Kenilworth, GB;

Leonard C. Feldman, New Brunswick, NJ (US);

Inventors:

John R. Williams, Opelika, AL (US);

Ayayi C. Ahyi, Auburn, AL (US);

Tamara F. Isaacs-Smith, Auburn, AL (US);

Yogesh K. Sharma, Kenilworth, GB;

Leonard C. Feldman, New Brunswick, NJ (US);

Assignees:

Auburn University, Auburn, AL (US);

Rutgers, The State University of New Jersey, New Brunswick, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/51 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/045 (2013.01); H01L 21/049 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01);
Abstract

Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.


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