The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Sep. 04, 2013
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Tsungying Yang, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention provides an anode connection structure of an organic light-emitting diode and a manufacture method thereof. The structure includes: a thin-film transistor () and an anode () of an organic light-emitting diode arrange don the thin-film transistor (). The thin-film transistor () includes a low-temperature poly-silicon layer () formed on a substrate (), a gate insulation layer () formed on the low-temperature poly-silicon layer (), a gate formed on the gate insulation layer (), a protection layer () formed on the gate, and a source/drain () formed on the protection layer (). The anode () of the organic light-emitting diode is connected to the low-temperature poly-silicon layer (). The present invention makes the anode of the organic light-emitting diode directly connected to the low-temperature poly-silicon layer of the thin-film transistor in order to shorten the distance between two adjacent switching thin-film transistors, increase the number of pixels in a unit area (each inch), and improve the resolution of a panel using the anode connection structure of the organic light-emitting diode.