The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Jun. 01, 2012
Applicants:

Mikael Egard, Lund, SE;

Erik Lind, Lund, SE;

Lars-erik Wernersson, Lund, SE;

Inventors:

Mikael Egard, Lund, SE;

Erik Lind, Lund, SE;

Lars-Erik Wernersson, Lund, SE;

Assignee:

Acconeer AB, Malmö, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 29/20 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28114 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/66462 (2013.01); H01L 29/66469 (2013.01); H01L 29/66522 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/31144 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 29/20 (2013.01); H01L 29/495 (2013.01); H01L 29/517 (2013.01); H01L 29/66871 (2013.01); H01L 29/7787 (2013.01);
Abstract

According to one aspect of the inventive concept there is provided a process for manufacturing a semiconductor device, comprising: providing a channel layer (), providing a mask () on the channel layer, epitaxially growing a contact layer () in contact with the channel layer, epitaxially growing a support layer () on the contact layer, wherein the support layer is arranged to be etched at a higher rate than the contact layer, forming a trench extending through the support layer by removing the mask, and providing a conductor () in the trench. There is also provided an intermediate product for the manufacture of a semiconductor device.


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