The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
May. 03, 2011
I-hun Song, Seongnam-si, KR;
Yin Huaxiang, Suwon-si, KR;
Sang-hun Jeon, Yongin-si, KR;
Sung-ho Park, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Yin Huaxiang, Suwon-si, KR;
Sang-hun Jeon, Yongin-si, KR;
Sung-ho Park, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Abstract
Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.